| abstract |
The present invention relates to an etching composition for a silicon nitride film, which is used to etch away a silicon nitride film in a semiconductor process, and wherein the etching rate of the silicon nitride film is higher than that of a silicon oxide film in a high temperature etching process. It relates to a composition for high selectivity etching. According to the present invention, the high selectivity etching composition may be selectively etched from the stacked silicon nitride film and the silicon oxide film, that is, etching at a select ratio of 2000: 1 or more, and at the same time minimizes the damage and etching rate of the silicon oxide film and the silicon nitride film An object of the present invention is to provide a high selectivity etching composition for minimizing the production of insoluble silicon compounds by etching. |