| abstract |
The present invention relates to a high selectivity etching composition for etching a silicon nitride film, which is used to etch away the silicon nitride film in a semiconductor process, and a semiconductor having a higher etching rate of the silicon nitride film than a silicon oxide film in a high temperature etching process It relates to a composition for high selectivity etching of a silicon nitride film for production. According to the present invention, the composition for high selectivity etching may be selectively etched from the stacked silicon nitride film and the silicon oxide film, that is, etching at a select ratio of 2000: 1 or more, and at the same time minimizes the damage and etching rate to the silicon oxide film and the process time The collapse phenomenon of the laminated structure does not occur. |