| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf213be03285a0b93967ae2fd2fd351a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 |
| filingDate |
2010-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e22d38558384be17b04d56c2e4983c2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac0fb3fb236635529c2ac697f99a6076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_816db6270de39abcc6ce94464291243b |
| publicationDate |
2011-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110115814-A |
| titleOfInvention |
Etching solution and electronic device manufacturing method |
| abstract |
An etching solution for selectively etching both the doped semiconductor layer and the metal electrode layer sequentially disposed on the intrinsic semiconductor layer of the electronic device with respect to the intrinsic semiconductor layer, the metal electrode etching component; Transition metals and / or transition metal salts; And inorganic salts including hydrofluoric acid and / or fluorine. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190058759-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140118147-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101715618-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140084417-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160109569-A |
| priorityDate |
2010-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |