http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140118147-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1362
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
filingDate 2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d23ea3640cc9dd49b2cecfb5d3900119
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_430fe6f6310944717d373fec9d7d8ccd
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publicationDate 2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140118147-A
titleOfInvention Manufacturing method of an array substrate for liquid crystal display
abstract The present invention relates to a method of manufacturing a semiconductor device, comprising: laminating a pure amorphous silicon (a-Si: H) thin film on a substrate and sequentially laminating an amorphous silicon (n + a-Si: H) Forming a mask pattern in which an etching region is opened on the amorphous silicon (n + a-Si: H) thin film containing the impurity; And The amorphous silicon (n + a-Si: H) thin film containing a pure amorphous silicon (a-Si: H) thin film and the impurities on the thin amorphous silicon A method for manufacturing an array substrate for a liquid crystal display, comprising the steps of: The etchant composition comprises (A) sulfuric acid salt in an amount of 5.0 to 15.0% by weight, (B) 1.0 to 20.0% by weight Fe 3 + compound, (C) 0.01 to 10.0% by weight of a fluorine compound, and (D) And the remaining amount of the liquid crystal material is included.
priorityDate 2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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