| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2009-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5f2f0797063404d816dd2d463bdf3ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fdc9bcf8ca5d844cf8494cbbf963d6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_912193549f2f34aaf01ec597cca41443 |
| publicationDate |
2009-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090084737-A |
| titleOfInvention |
Method and film forming apparatus for semiconductor processing, and computer readable medium |
| abstract |
A silicon-containing insulating film is formed on the substrate to be treated by CVD in a processing region capable of selectively supplying a first processing gas having a diisopropylaminosilane gas and a second processing gas having an oxidizing gas or a nitriding gas. For this reason, the cycle which alternately has a 1st and 2nd process is repeated several times. In the first step, the first processing gas is supplied to form an adsorption layer containing silicon on the surface of the substrate to be processed. In the second step, the second processing gas is supplied to oxidize or nitride the adsorption layer on the surface of the substrate to be processed. The second step includes an excitation period in which the second processing gas is supplied to the processing region in the excited state by the excitation mechanism. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10643902-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101295174-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10354923-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180131342-A |
| priorityDate |
2008-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |