| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2005-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2007-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20070019748-A |
| titleOfInvention |
Method of manufacturing the interconnect structure |
| abstract |
The interconnect structure is fabricated by a method comprising depositing a thin conformal passivation dielectric and / or diffusion barrier gap and / or hardmask interconnect structure by atomic layer deposition or supercritical fluid based process.n n n n Damascene, dual damascene, atomic layer deposition, supercritical fluid based process |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492170-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012148641-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8697583-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012148641-A2 |
| priorityDate |
2004-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |