http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060010446-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-32 |
| filingDate | 2004-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b937c488b1e2612caf6869d9eb0ad36 |
| publicationDate | 2006-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060010446-A |
| titleOfInvention | Pattern formation method of semiconductor device |
| abstract | The present invention relates to a method of forming a pattern of a semiconductor device, and instead of a pad nitride film formed on a material layer when patterning a predetermined material layer, an organic material film made of an organic material that can be removed together when removing a photoresist is formed. By patterning the material layer in the state, the step for eliminating the pad nitride layer is omitted in a subsequent process step, thereby preventing the etching layer from occurring during the removal of the pad nitride layer, thereby simplifying the steps of the process and improving the electrical characteristics of the device. Can be improved. n n n n Pad nitride film, organic material, photoresist |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8531003-B2 |
| priorityDate | 2004-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.