http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8531003-B2

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filingDate 2012-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f9f9a8f36f8eeaa03ef501f802a44b2
publicationDate 2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8531003-B2
titleOfInvention Semiconductor device and manufacturing method of the same
abstract Provided is a semiconductor device. The semiconductor device includes a first insulation layer on a semiconductor substrate, the first insulation layer including a lower metal line, a metal head pattern on the first insulation layer, the metal head pattern including an inclined side surface, a thin film resistor pattern on the metal head pattern, a second insulation layer on the metal head pattern and the thin film resistor pattern, an upper metal line on the second insulation layer, a first via connecting the lower metal line to the upper metal line, and a second via connecting the metal head pattern to the upper metal line.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015162396-A1
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Total number of triples: 29.