| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b62a061db267544224c10495ee0cd640 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F2-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F2-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F118-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
2004-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db5f49c967ca392b46409065d5bed0be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9efb4b31c34fb381ced5746f775a7212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0900d7f522aeca4e73569ed65620a79a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00464102c655bbbd7bd9f8cf2119119b |
| publicationDate |
2005-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20050058203-A |
| titleOfInvention |
A preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process |
| abstract |
Used for formation of a micropattern required for semiconductor production, which comprises the presence of a polymerization inhibitor component in a solution containing a monomer while performing radical polymerization of two or more monomers having an ethylene-based double bond in a polymerization solvent in the presence of a polymerization initiator. A method for producing a copolymer for semiconductor lithography, which is suitable for the film forming composition to be formed; And a copolymer for semiconductor lithography prepared by the above method, containing no high polymer, having excellent storage stability and generating significantly fewer defects in resist patterns when used in semiconductor lithography. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190013147-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019027181-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11531268-B2 |
| priorityDate |
2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |