| abstract |
The present invention relates to a device integration method and an integrated device. The method includes polishing the surface of each of the first and second workpieces to a surface roughness of about 5 to 10 Angstroms. The polished surfaces of the first and second workpieces are joined together. The surface of the third workpiece is polished to its surface roughness. The surface of the third workpiece is coupled to the joined first and second workpieces. The first, second and third workpieces may each be a semiconductor device having a thin material formed on one surface, preferably in the form of a wafer. The thin materials are bonded together after being polished to the desired surface roughness. Thin materials may each have a thickness of about 1 to 10 times the surface being the non-planar surface of the material from which they are formed. Several devices may be combined together and the devices may be different types of devices or different technologies. |