| abstract |
The present invention relates to a method for depositing thin films required for the manufacture of semiconductor devices and the like. By applying the invention of generating plasma synchronized with the raw material supply cycle to the chemical vapor deposition method of sequentially supplying process gas in time, it is possible to deposit or deposit a film of material that is difficult to be deposited by the normal chemical vapor deposition method among the films used for semiconductor devices. The thin film which changed the composition of in turn can be formed. |