| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E02D29-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E02D29-149
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2006-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a429c01819c620297c36f8183558931
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78f2215c376c7a01c7ac2bdf69c92091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6bccafcba0bf7ab564b96fb7617d7a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_563b824bf44b70b7643e55632bc4bbab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0533ea8319227d8310eb83ea343c28cc |
| publicationDate |
2009-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7560383-B2 |
| titleOfInvention |
Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same |
| abstract |
In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the substrate. While the source gas is provided, a plasma is generated in the chamber for a second time to change the chemisorbed source gas into the thin layer having the desired composition. The thin layer may have a stoichiometrical composition or a non-stoichiometrical composition. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009068825-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8324011-B2 |
| priorityDate |
2005-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |