| abstract |
In the present invention, for example, on the surface of a highly heat resistant substrate having a polysilicon wiring layer that withstands a temperature of 500 DEG C or more, the crack formation thickness limit is significantly high without excessive diffusion of dopants through the source layer or the drain layer of the semiconductor device. A method of forming a silica coating is disclosed. This method comprises the steps of applying a coating liquid containing a modified polysilazane compound, which is a reaction product of polysilazane and dialkylalkanolamine, on a substrate surface to form a coating layer, drying the coating layer, Performing a first firing treatment on the dried coating layer at 350 to 450 ° C. for 10 to 60 minutes, and performing a second baking treatment on the coated layer after the first baking treatment at 550 to 800 ° C. for 0.5 to 60 minutes. It is characterized by including the process. |