http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980032978-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J27-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 1997-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980032978-A |
| titleOfInvention | Helicon Propagation Excitation for Producing Energy Electrons for Semiconductor Manufacturing |
| abstract | The helicon plasma source is regulated by altering the axial magnetic field or rf output that controls the formation of helicon propagation. Energy electron flow runs on radio waves when the magnetic field is 90 G; There is a minimum energy electron flow when the magnetic field is 100 G in one particular plasma source. Similar behavior is expected from other helicon sources by appropriately adjusting the magnetic field and output to specific geometries. Such regulation to initiate and block the production of energy electrons can also be used in the field of semiconductor and thin-film manufacturing. By applying energy electrons to an insulating layer such as silicon oxide, the etch ions are attracted to the insulating layer and impinge on the insulating layer with higher energy than the area where the energy electrons are not laminated. Thus, the silicon and metal layers are capable of neutralizing energy electron flow and will be etched at lower or non-existent rates. This process is particularly advantageous in the manufacture of multilayer semiconductors in which trenches are formed in the range of 0.18-0.35 μm or smaller. |
| priorityDate | 1996-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.