http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102469451-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2019-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102469451-B1 |
| titleOfInvention | Method for area-selective etching of silicon nitride layers for the manufacture of microelectronic workpieces |
| abstract | The disclosed embodiments enable fabrication of microelectronic workpieces by sequentially exposing a silicon nitride layer to hydrogen ions/radicals followed by fluorine ions/radicals using beam delivery techniques such as ion beam and/or neutral beam techniques. Provides area-selective etching of silicon nitride for The area selective etching process is anisotropic when using hydrogen ions and isotropic when using hydrogen radicals. Also, sputtering of material onto a substrate for a microelectronic workpiece is not necessary for the disclosed embodiments. Also, area selective etching of silicon nitride is achieved by using ion beam and/or neutral beam techniques, as opposed to the large area etching provided by conventional plasma processing techniques. For certain embodiments, the ion/neutral beam techniques described herein are used to fabricate a silicon nitride hard mask without requiring the use of any mask. |
| priorityDate | 2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.