| abstract |
The invention relates in particular to a method for creating patterns in a layer ( 410 ) to be etched, starting from a stack comprising at least the layer ( 410 ) to be etched and a masking, layer ( 420 ) on top of the layer ( 410 ) to be etched, the masking layer ( 420 ) having at least one pattern ( 421 ), the method comprising at least;n a) a step of modifying at least one zone ( 411 ) of the layer ( 410 ) to be etched via ion implantation ( 430 ) vertically in line with said at least one pattern ( 421 ); b) at least one sequence of steps comprising:n b1) a step of enlarging ( 440 ) the at least one pattern ( 421 ) in a plane in which the layer ( 410 ) to be etched mainly extends; b2) a step of modifying at least one zone ( 411″, 411″ ) of the layer ( 410 ) to be etched via ion implantation ( 430 ) vertically in line with the at least one enlarged pattern ( 421 ), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) n c) a step of removing ( 461, 462 ) the modified zones ( 411, 411′, 41″ ), the removal comprising a step of etching the modified zones ( 411, 411′, 411″ ) selectively with respect to the non-modified zones ( 412 ) of the layer ( 410 ) to be etched. |