| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102364434-B1 |
| titleOfInvention |
Etching method |
| abstract |
The present invention provides a method of etching a first region having a multilayer film constituted by alternately providing a silicon oxide film and a silicon nitride film, and a second region having a single layer silicon oxide film. An etching method according to an embodiment includes the steps of: generating a plasma of a first processing gas containing a hydrofluorocarbon gas in a processing vessel containing a target object; and generating a plasma of the 2 processing gas. In this method, the process of generating the plasma of the first process gas and the process of generating the plasma of the second process gas are alternately repeated. |
| priorityDate |
2014-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |