http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102342686-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2018-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102342686-B1 |
| titleOfInvention | Plasma treatment method |
| abstract | An object of the present invention is to provide a plasma processing method for plasma-etching a wafer such as a semiconductor substrate, by etching the wafer to remove the metal and non-metal composite deposits deposited in the processing chamber, and to reduce the generation of foreign substances due to the deposits. A plasma treatment method is provided. The present invention provides a plasma processing method for plasma-cleaning the inside of the processing chamber by plasma etching a sample in a processing chamber, comprising: an etching step of plasma-etching a predetermined number of the sample; and after the etching step, using plasma to contain a metal element a metal removal step of removing the deposited film; and a non-metal removal step of removing the deposited film containing a non-metal element using a plasma different from the plasma of the metal removal step, wherein the metal removal step and the non-metal removal step are repeated two or more times characterized in that |
| priorityDate | 2017-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.