| abstract |
(57) Abstract: When etching a stacked film including a lower film mainly composed of silicon and an upper film mainly composed of tungsten or a tungsten compound, even if the number of processes increases. The cross section of the patterned upper layer film is not tapered. SOLUTION: In a chamber 20, an upper layer film is etched using an etching gas containing fluorine. In the chamber 20, the lower layer film is etched using an etching gas containing chlorine or bromine. A cleaning gas containing fluorine is introduced into the chamber 20, and fluorine in plasma generated from the cleaning gas reacts with a silicon-containing compound attached to a side wall of the chamber 20, and a reaction product generated by the reaction Is discharged out of the chamber 20. |