| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32513 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2015-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102339803-B1 |
| titleOfInvention |
Deposition of silicon and oxygen-containing films without an oxidizer |
| abstract |
A silicon and oxygen-containing film, such as a silicon dioxide film, introduces siloxane precursors into a plasma processing chamber and dissociates at least some of the Si-H bonds of the siloxane precursors, for example, by exposing the siloxane precursors to a low energy plasma. deposited in the absence of The silicon and oxygen-containing film can be formed on the oxidation-prone surface without oxidizing the oxidation-prone surface. The deposited silicon and oxygen-containing film may serve as an initiation layer for a bulk silicon dioxide layer formed on top of the initiation layer using conventional silicon oxide deposition techniques, such as by exposing the siloxane precursors to an oxygen-containing plasma. The initiation layer may be post-treated or cured to reduce the concentration of Si—H bonds before or after deposition of the bulk layer. |
| priorityDate |
2014-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |