| abstract |
The method includes etching a dielectric layer of the substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, wherein a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form source/drain regions , performing an annealing process, performing a plasma treatment process on the substrate using a process gas comprising a nitrogen-containing gas and a hydrogen gas to form a silicon and nitrogen-containing layer, and a metallic material on the silicon and nitrogen-containing layer It includes the step of forming a film. |