http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102256632-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67161 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate | 2015-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102256632-B1 |
| titleOfInvention | Light emitting device and e-beam evaporating apparatus manufacturing the same |
| abstract | The light emitting device of the embodiment includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; And first and second electrodes disposed on the first and second conductivity-type semiconductor layers, respectively. Wherein the light emitting structure includes a first mesa region, the first conductivity type semiconductor layer includes a second mesa region, and the first electrode includes a first region that is a partial region of an upper surface of the second mesa region; A second area that is a side of the second mesa area; And a third area extending from an edge of a side surface of the second mesa area. And, the thickness ratio of the first region d1, the second region d2, and the third region d3 is d1:d2:d3 = 1: 0.9 to 1.1: 1, and is formed in the first electrode layer. The improved step coverage can improve the productivity and optical properties of the manufacturing process. |
| priorityDate | 2015-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.