| abstract |
A light-emitting element with improved yield and improved luminous efficiency is provided. According to one embodiment, a light emitting device includes a substrate; a lower and upper semiconductor layer having different conductivity types disposed on the substrate, and an active layer disposed between the lower and upper semiconductor layers. A first electrode layer disposed on the upper semiconductor layer, wherein the first electrode layer includes a first adhesive layer and a first bonding layer that are overlaid, and the first adhesive layer and the first bonding layer There is no reflective layer between the layers. [Selection] Figure 1 |