| abstract |
A mask-integrated surface protection tape used for manufacturing a semiconductor chip comprising the following steps (a) to (d), wherein the mask-integrated surface protection tape is a radiation-curable pressure-sensitive adhesive layer and a radiation-curable mask material layer on a base film in this order. In the following step (b), the pressure-sensitive adhesive layer and the mask material layer are separated before radiation irradiation, and the mask material layer and the pattern surface are separated after radiation radiation. [Steps (a) to (d)] (a) Grinding the back side of the semiconductor wafer while attaching the mask-integrated surface protection tape to the pattern side of the semiconductor wafer, and fitting the wafer fixing tape to the back side of the ground semiconductor wafer Attaching, supporting and fixing with a ring frame, (b) After integrally peeling the base film and the pressure-sensitive adhesive layer from the mask-integrated surface protection tape to expose the mask material layer to the surface, the portion of the mask material layer corresponding to the street of the semiconductor wafer (C) a plasma dicing step of dividing the semiconductor wafer into semiconductor chips by dividing the semiconductor wafer at the street with SF 6 plasma, and (d) O 2 plasma An ashing process for removing the mask material layer. |