| abstract |
A semiconductor manufacturing method is disclosed. The method includes receiving a device having a first surface to which a first metal or oxide of a first metal is exposed. The method comprises depositing a dielectric film with Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in the first portion of the dielectric film than the second portion of the dielectric film. Further comprising steps. The first portion of the dielectric film is near the first surface, and the second portion of the dielectric film is located farther from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive features from the first metal or the oxide of the first metal. |