http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101948186-B1

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filingDate 2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101948186-B1
titleOfInvention Dry etching method and dry etching agent
abstract The present invention has been made in view of the above problems and provides an etching method capable of suppressing the occurrence of abnormalities such as a bowing or roughness of a side wall surface when the amorphous carbon is etched. (Solution) A plasma gas obtained by plasma-forming a dry etching agent containing at least oxygen and alkylsilane on a substrate having an amorphous carbon film provided in the chamber is used, and the amorphous carbon film is plasma-etched using the inorganic film as a mask Dry etching method is used. That the said alkyl silane, (CH 3) 4 Si, (CH 3) 3 SiH, (CH 3) 2 SiH 2 and (CH 3) at least one species selected from the group consisting of SiH 3 are preferred.
priorityDate 2015-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 39.