| abstract |
A method of fabricating a semiconductor device includes forming a first dielectric layer over a substrate comprising a gate structure, forming a first trench in the first dielectric layer, forming dielectric spacers along the sidewalls of the first trench, Exposing a portion of the sidewalls by removing a portion of the dielectric spacers, forming a first metal feature on the other portion of the dielectric spacers and along the exposed portions of the sidewalls of the first trench in the first trench, Forming a second dielectric layer over the first metal feature and the gate structure; in the same etching process, forming a second trench through the second dielectric layer to expose a portion of the first metal feature; 1 < / RTI > dielectric layer to form a third trench to expose a portion of the gate structure The. |