| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| filingDate |
2017-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101759157-B1 |
| titleOfInvention |
Film-forming method for forming silicon oxide film |
| abstract |
[PROBLEMS] To provide a method for forming a silicon oxide film on a tungsten film or a tungsten oxide film capable of shortening the incubation time of the silicon oxide film even when the silicon oxide film is formed on the tungsten film or the tungsten oxide film. (Step 1) of forming a tungsten film or a tungsten oxide film on an object to be processed, a step (step 2) of forming a seed layer on a tungsten film or a tungsten oxide film, and a step of forming a silicon oxide film (Step 3). The seed layer is formed on a tungsten film or a tungsten oxide film by heating the object to be processed and supplying an aminosilane-based gas to the surface of the tungsten film or tungsten oxide film. |
| priorityDate |
2010-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |