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publicationDate 2001-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001274157-A
titleOfInvention Semiconductor device manufacturing method and apparatus
abstract PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a semiconductor element having a film and an interface with few defects and having improved characteristics and reliability. SOLUTION: This manufacturing method includes an oxide film forming step of supplying neutral active species or oxygen atoms of oxygen to the surface of a semiconductor substrate, and a carbide removing step of supplying ozone. Thereafter, a silicon-containing material and a neutral active species of oxygen or oxygen atoms are supplied to form a silicon oxide film, thereby manufacturing a semiconductor element. An apparatus therefor is also disclosed.
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