http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101580205-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2009-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101580205-B1 |
| titleOfInvention | Plasma doping method and semiconductor device manufacturing method |
| abstract | A plasma doping method capable of uniformly introducing impurities into an object to be treated. a boron gas containing boron as a p-type impurity and an argon gas as a rare gas are generated and a boron radical 21 in the plasma is not applied to the silicon substrate 13 13) Deposits on the surface. Thereafter, the supply of the diborane gas is stopped, and the bias potential is applied to the silicon substrate 13 to irradiate the surface of the silicon substrate 13 with the argon ions 22 in the plasma. The boron radicals 21 are introduced into the silicon substrate 13 by irradiating the boron radicals 21 with the irradiated argon ions 22. The p-type impurity diffusion layer 23 is formed in the silicon substrate 13 by activating the introduced boron radical 21 by heat treatment. |
| priorityDate | 2008-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.