http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100803253-B1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
filingDate 2001-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100803253-B1
titleOfInvention Plasma chamber support member with coupling electrode
abstract A processing chamber 110 capable of processing a substrate 30 in a plasma processing gas. The chamber 110 includes a support member 200 having a dielectric 210 covering the electrode 220 and a conductor 230 under the electrode 220. The voltage source 180 supplies the gas energizing voltage to the conductor 220, and the conductor energizes the process gas by capacitively coupling the voltage to the electrode 220. Alternatively, a voltage may be supplied to the electrode 220 through the connector 195, which may be capacitively coupled with the conductor 230. In addition, the DC power supply 190 supplies an electrostatic chucking voltage to the electrode 220. In one example, the conductor 230 has an interposer 280.n n n n Processing chamber, substrate
priorityDate 2000-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.