http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100798160-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2005-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100798160-B1 |
| titleOfInvention | Plasma Etching Method |
| abstract | The present invention provides a plasma etching method which can avoid the generation of fences and at the same time etch Ti at a high etching rate, and also suppress the generation of deposits in the chamber during the etching process, thereby preventing particle contamination in advance.n n n Fluorine compounds are contained at a pressure of 4 Pa or less in the chamber with respect to an object to be processed in which a mask layer having a pattern of at least a predetermined shape and a Ti layer as an etching target layer formed under the mask layer are formed in a processing container that can be maintained in a vacuum. A first plasma processing step of etching the Ti layer by etching a plasma of an etching gas, and a second step of introducing dry gas into the processing chamber by plasma of a cleaning gas after the completion of the first plasma processing step to perform dry cleaning. A plasma treatment step is included, and in the second plasma treatment step, deposits containing Ti compounds produced by the first plasma treatment step are removed. |
| priorityDate | 2004-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.