http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000040062-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b06cd22ab3bfbdca17825e5d731dee1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9362e42310d6318bb23c6cc43787187 |
| publicationDate | 2000-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000040062-A |
| titleOfInvention | Wiring formation method |
| abstract | The present invention relates to a wiring forming method for reducing the thickness of an insulating film hard mask because a double hard mask of an insulating film hard mask layer and a metal upper hard mask layer is formed on a tungsten layer.n n n The wiring forming method of the present invention comprises the steps of forming a first insulating film having a plurality of contact holes on a substrate, forming a first, a second conductive layer, a second insulating film on the front surface, the second insulating film on the Forming a third conductive layer having a large etching ratio with a second conductive layer, etching the second insulating layer and the third conductive layer so as to remain only at a portion where wiring is to be formed around the contact hole, and the second insulating layer Selectively etching the second conductive layer using a film and a third conductive layer as a mask, and selectively etching the first conductive layer using the second insulating film and a third conductive layer as a mask and simultaneously etching the third conductive layer Characterized in that it comprises a step of removing. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7488689-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100798160-B1 |
| priorityDate | 1998-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.