| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atomic layer etching method of an oxide film, in which an supply of ions generated by a plasma and a supply of a reactive gas are alternately repeated so that the surface atomic layer activated by the plasma is removed by reacting with the reactive gas. An etching method comprising the steps of: (1) supplying ions generated by a reducing plasma; (2) pumping and purging to remove unreacted ions, H radicals and reaction byproducts in the reaction tube; (3) supplying a reactive gas into the reaction tube; And (4) repeatedly performing pumping and purging to remove unreacted reactive gas and reaction by-products in the reaction tube to remove the thin film of oxide in atomic layer units.n n n n Oxide film, atomic layer, fine pattern |