| abstract |
A semiconductor substrate, a plurality of element regions partitioned by the element isolation regions on the semiconductor substrate, and an interlayer insulating film covering the semiconductor substrate on which the element regions are formed, and connected to each of the element regions or the respective element regions. And a conductor layer connected to the layer, and a wiring layer formed on the interlayer insulating film and connected to the respective conductor plugs, wherein the conductor plug has a straight line in a direction orthogonal to the longitudinal direction of the wiring layer. 2, the dividing line passing through the center of the cut surface, which is arranged at the same pitch as the wiring layer in a form passing through the upper surface, and which cut the conductor plug into a plane parallel to the main surface of the semiconductor substrate; The distance between two intersections, the rotation of the dividing line by 360 ° The semiconductor device is provided comprising a contact to have a diameter at least three maximum value and a minimum value of three or more. |