| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-46 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2001-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2004-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100450840-B1 |
| titleOfInvention |
Method for processing coating film and method for manufacturing semiconductor element with use of the same method |
| abstract |
Provided is a method for processing a film that prevents damage to a silica film (interlayer insulating film) when the resist pattern is ashing.n n n The silica-based coating film formed on the substrate is subjected to an etching treatment through a resist pattern, and then the silica-based coating film after the etching treatment is treated by a plasma derived from an inert gas such as helium gas. Thereby, the silica-based coating film is not damaged during the ashing of the resist pattern in the subsequent step, and a low dielectric constant can be maintained. |
| priorityDate |
2000-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |