| abstract |
A material for forming a silica-base coated insulation film, which is used for forming an interlayer insulation film of a multilayer interconnection of a VLSI, and is prepared from (a) an alkoxysilane and/or a partial hydrolyzate thereof, (b) a fluoroalkoxysilane and/or (e) an alkylalkoxysilane, (c) an alkoxide of a metal other than Si and/or a derivative thereof, and (d) an organic solvent. This material has a shell stability and can form a thick film. The silica-base insulation film obtained therefrom is transparent and uniform, freed from defects such as crack or pinhole, and excellent in oxygen plasma resistance. |