http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016080217-A1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 2015-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2016080217-A1 |
titleOfInvention | Silicon-containing resist underlayer film forming composition capable of wet removal |
abstract | A resist underlayer film forming composition for forming a resist underlayer film that can be used as a hard mask and can be removed by a wet etching method using a chemical solution such as sulfuric acid / hydrogen peroxide. The component (A) includes a component (B), the component (A) includes a hydrolyzable silane, a hydrolyzate thereof, or a hydrolyzed condensate thereof, and the hydrolyzable silane is represented by the formula (1). ): [Chemical 1] [In Formula (1), R 1 is Formula (2): [Chemical formula 2] And is bonded to a silicon atom by a Si—C bond. R 3 represents an alkoxy group, an acyloxy group, or a halogen group. a represents an integer of 1, b represents an integer of 0 to 2, and a + b represents an integer of 1 to 3. A hydrolyzable silane represented by The component (B) is a crosslinkable compound containing a ring structure having an alkoxymethyl group or a hydroxymethyl group, or a crosslinkable compound having an epoxy group or a blocked isocyanate group, and a resist underlayer film forming composition for lithography, . [Selection figure] None |
priorityDate | 2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 1007.