| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02021 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
1997-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5f1e57193a338a6c951874e159f97b2 |
| publicationDate |
1998-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H1056006-A |
| titleOfInvention |
Method and apparatus for etching a damaged area at the periphery of a semiconductor substrate |
| abstract |
(57) [Summary] [PROBLEMS] To enable etching of a damaged area without consuming a large amount of chemicals. SOLUTION: The present invention provides a method for manufacturing a semiconductor substrate even if a resist is not applied to a front surface and a back surface of the semiconductor substrate. An apparatus and a method capable of etching the peripheral portion 14 of the substrate are provided. The semiconductor substrate 11 is introduced into the protection chamber 3 provided in the processing chamber 2 which can be evacuated. The semiconductor substrate front surface 12 and the semiconductor substrate back surface 13 are covered with the protection chamber 3 except for the semiconductor substrate edge 14 to be etched. An etching agent is applied on the peripheral portion 14 of the semiconductor substrate, The etching products and excess etching agent are then discharged. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8177992-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6313023-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8853054-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009142817-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009142818-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101377996-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007043148-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8309464-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8192822-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013153181-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100397589-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8735261-B2 |
| priorityDate |
1996-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |