| abstract |
(57) Abstract: In a method of manufacturing an SOI substrate, wet etching has been conventionally performed when removing a porous single crystal Si region, but wet etching is performed when a large number of SOI substrates are manufactured. It was difficult to control the concentration, resulting in a decrease in productivity. At least a porous single crystal Si region (101) Forming a non-porous single-crystal Si region 102 on the surface of the porous single-crystal Si region 101 of the single-crystal Si substrate 100 having: a supporting substrate 110 on the surface of the non-porous single-crystal Si region, and an insulating region 103. Process of bonding via And a step of removing the porous single crystal Si region, wherein the porous single crystal Si The step of removing the region includes a step of performing dry etching in which the etching rate of the porous single crystal Si region is higher than that of the non-porous single crystal Si region. |