| abstract |
In a process for bonding a single crystal semiconductor substrate and a support substrate and forming a thin single crystal semiconductor layer peeled off from the single crystal semiconductor substrate on the support substrate, manufacturing that shortens the substrate transport distance and improves productivity. Providing equipment. In addition, a manufacturing apparatus is provided which reduces dust attached to a substrate during the process and improves yield. A substrate holding unit for holding a plurality of substrates, a plasma processing unit for flattening the surface of the substrate, a sputter deposition processing unit for forming an insulating film on the surface of the substrate, and a surface of the substrate A semiconductor substrate comprising: a reversing portion for reversing the back surface in the apparatus; a bonding portion for bonding the surfaces of the substrate and the substrate so as to face each other; and a heat treatment portion for heat-treating the pair of substrates. In the manufacturing apparatus, the substrate moving distance during the process is reduced while performing surface cleaning and planarization. [Selection] Figure 4 |