http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0831825-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
filingDate | 1994-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b700edb947f8b33062abfd4c3ebd06a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98e6a59c7bd6f23275acd05094dddfff |
publicationDate | 1996-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H0831825-A |
titleOfInvention | Method for manufacturing semiconductor device |
abstract | (57) [Abstract] [Purpose] SiN film has excellent step coverage and Si A semiconductor device with less operation delay due to parasitic capacitance associated with the N film is manufactured. [Structure] Organic Si containing at least nitrogen and fluorine The SiN film 14 is formed using the compound as a raw material. Using an organic Si compound containing nitrogen as a raw material, the SiN film 14 Since the intermediate product is easily polymerized at the time of forming and has fluidity, the SiN film 14 having excellent step coverage can be formed. Moreover, since the organic Si compound contains fluorine and fluorine is taken into the formed SiN film 14 to lower its dielectric constant, the operation delay due to the parasitic capacitance can be reduced. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013100262-A |
priorityDate | 1994-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.