abstract |
A method of forming a precursor and a film is provided. X m R 1 n H p Si (NR 2 R 3 ) 4-mnp having formula I, wherein X is selected from Cl, Br, I; R 1 is linear or branched C 1 -C 10 alkyl group, C 2 -C 12 alkenyl group, C 2 -C 12 alkynyl group, is selected from C 4 -C 10 cyclic alkyl, and C 6 -C 10 aryl group; R 2 is straight or branched C 1 -C 10 alkyl, C 3 -C 12 alkenyl group, C 3 -C 12 alkynyl group, is selected from C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; R 3 is branched C 3 -C 10 alkyl group, C 3 -C 12 alkenyl group, C 3 -C 12 alkynyl group, is selected from C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; m is 1 or 2; n is 0, 1 or 2; p is 0, 1 or 2; m + n + p is less than 4, with the order to which R 2 and R 3 to form a connected forming a ring or ring Precursors that are not are provided. [Selection figure] None |