| abstract |
(57) An object of the present invention is to provide a plasma processing apparatus and method capable of processing in a short time and at a low temperature by using heat and plasma together. A plasma processing apparatus for processing an object to be processed with active species excited by plasma discharge includes a susceptor electrode 30 supporting the object to be processed 1 and a counter electrode 20 thereof, and an AC voltage from a power supply 40 is applied thereto. It has a pair of electrodes for plasma generation to be applied. Further, the halogen lamp 60 that radiates heat rays toward the object to be processed 1 is It is provided outside 30. The electrodes 20 and 30 are transparent to the heat rays from the halogen lamp 60 and have an upper temperature limit of 20. It is formed of a material having a temperature of 0 ° C. or higher, for example, doped silicon in which impurities are doped in a silicon substrate. |