http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08186103-A

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publicationDate 1996-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08186103-A
titleOfInvention Thin film deposition equipment
abstract (57) [Abstract] [Purpose] For a CVD apparatus using a liquid CVD raw material, a CVD raw material vapor having a stable composition can be supplied to a reaction chamber during film formation, and a high quality thin film can be formed on a substrate. The purpose is to obtain means that can be formed. [Structure] The CVD apparatus is provided with a mass spectrometer 20 for detecting the concentration of vaporized CVD raw material. The sampling unit of 0 is arranged to face the raw material gas transport pipe 10 that transports the CVD raw material from the vaporizer 4 to the reaction chamber 15. Thus, by the mass spectrometer 20, the reaction chamber 1 The concentrations of Ba, Sr, and Ti in the CVD source vapor supplied to No. 5 are analyzed, and based on this, the composition of the CVD source is controlled to match the target value, and a high-quality thin film is formed on the substrate.
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