| abstract |
(57) [Summary] [Purpose] Performs high-precision microfabrication of a ferroelectric film with a high etching rate and without dimensional shift. [Structure] A PZT film 6 is formed on a Pt film 5 by a sol-gel method, and an SOG film 8 serving as a mask is formed on the PZT film 6. Pattern. This sample wafer was set in the ECR plasma etching apparatus, and as an etching gas, A mixed gas of Ar gas and chlorine gas is introduced so that the flow rate ratio of the halogen gas to the total flow rate of the mixed gas is 50% or less, and the substrate temperature is set in the range of 100 ° C. to 400 ° C. Etching is performed. |