http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06326199-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2175de8bcadd3c1447a15ba8b57051c6
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1991-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_081f518ca106e97f10565a449167ee30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d4d009e6d33c3d3a7db4e4ef1b24636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_715a9d529d27f82011f380855ff7ad60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2a7fc4eb5c1a6ba4b1c1a0bfa613080
publicationDate 1994-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06326199-A
titleOfInvention Method for forming thin film of semiconductor device
abstract (57) [Summary] [Object] To provide a method for forming a thin film of a semiconductor device, in particular, a method for forming a planarized interlayer insulating film or surface protection film. A region coated with a first substance and a region coated with a second substance are formed on a semiconductor substrate, and a film growth rate is fast on the first substance and a film growth rate is slow on the second substance. A thin film of a third material is formed to have different thicknesses on the two regions. [Effect] It is possible to easily form a planarization thin film for solving the step coverage problem of an ultra-high integration semiconductor device.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05234996-A
priorityDate 1991-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 19.