http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05234996-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1992-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57057b897e8b52777fb3963ed0d39d4e |
| publicationDate | 1993-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05234996-A |
| titleOfInvention | Multilayer wiring formation method |
| abstract | (57) [Summary] [Object] To provide a method for forming a high-quality multilayer inter-layer insulating film which does not depend on the density of aluminum wiring, has good flatness, and has no defective through-hole connection. [Structure] A silane-based plasma oxide film 3 is deposited on a substrate 4, an aluminum alloy film and a PSG film are deposited, and then the aluminum alloy film and the PSG film are simultaneously processed, and a PSG film 5 is formed on an upper surface of an aluminum wiring 6. Create such a structure. Next, O 3 / TEOS atmospheric pressure CVD method is used to form an O 3 / TEOS oxide film 8 to obtain a flat interlayer insulating film. By repeating this process, multilayer wiring is formed. |
| priorityDate | 1992-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.