| abstract |
(57) [Summary] [Structure] A fluorocarbon-based gas composed of carbon (C) and fluorine (F), in which the ratio of F to C is 3 The following C 4 F 8 , C 3 F 8 , C 2 F 6 gas, etc. A method for manufacturing a semiconductor device in which plasma is formed by CR and etching is performed. [Effect] A large amount of free C can be generated from C 4 F 8 , C 3 F 8 , C 2 F 6 gas, etc., and the SiO 2 film 33 can be decomposed by the free C, so that the SiO 2 film 33 is separated. The SiN film 31 can be highly selectively etched, and a semiconductor device having an extremely high degree of integration can be easily manufactured. |