http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02138474-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e1255487a1f593515ad2b213661b50e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate | 1988-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_040b5fb60c4cff9796a0f3af777f6b7c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc4f2d3768f637f2bc8dfeb464da0000 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_899d80d9ce7f9dc0064d8e45149894c2 |
| publicationDate | 1990-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02138474-A |
| titleOfInvention | Formation of thin film |
| abstract | PURPOSE: To form a thin film which sticks around a substrate surface, has excellent film quality and is flattened in steps by disposing the substrate in a reaction chamber and generating electron cyclotron resonance while supplying a reaction gas to the chamber. n CONSTITUTION: The substrate 3 provided with a cooling mechanism 2 which is supplied with liquid nitrogen 13 and releases the same as gaseous nitrogen 14 is disposed in the reaction chamber 1 subjected to a pressure reduction. Gaseous O 2 for plasma formation is introduced into a plasma forming chamber 4 provided successively to the lower part thereof. Magnetic fields are generated by energizing magnetic coils 6, 7 on the outer side and microwaves 9 of 2.45GH 2 are introduced into the plasma forming chamber 4 from the lower part thereof to generate plasma under the conditions satisfying electron cyclotron resonance position (ECR point) conditions. Tetraethoxysilane 11 which is an oxide film forming material is then bubbled by gaseous O 2 10 and is introduced into the reaction chamber 1 by which the tetraethoxysilane is cracked and is brought into reaction with the O 2 . The flat film of the SiO 2 is thus formed on the surface of the substrate 3. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07106259-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017147438-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08119793-A |
| priorityDate | 1988-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.